PART |
Description |
Maker |
APT29F100B2 APT29F100L |
1000V, 29A, 0.46Ω Max, trr ?70ns N-Channel FREDFET
|
Microsemi Corporation
|
APT19F100J |
1000V, 19A, 0.46Ω Max, trr ?70ns
|
Microsemi Corporation
|
APT4F120K APT4F120K10 |
1200V, 4A, 4.2Ω Max Trr ?95nS
|
Microsemi Corporation
|
APT7F120B APT7F120S APT7F120B09 |
N-Channel FREDFET 1200V, 7A, 2.4Ω Max, trr ?90ns
|
Microsemi Corporation
|
1SS303 |
Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX.
|
TY Semiconductor Co., Ltd
|
PM3604-10-RC PM3602-33-B PM3602-100-RC PM3602-150- |
Power Inductor; Series:PM3600; Inductance:100uH; Inductance Tolerance: /- 20 %; Terminal Type:PCB Surface Mount; Current Rating:Parallel 0.58, Series 0.29A; DC Resistance Max, Parallel:0.4ohm; DC Resistance Max, Series:1.6ohm Power Inductor; Series:PM3600; Inductance:150uH; Inductance Tolerance: /- 20 %; Terminal Type:PCB Surface Mount; Current Rating:Parallel 111, Series 444A; DC Resistance Max, Parallel:0.6ohm; DC Resistance Max, Series:2.4ohm
|
Bourns Inc.
|
EP01C AP01C EP01 |
1000V,Fast-Recovery Rectifier Diodes(1000V,快速恢复整流二极管)
|
http:// SANKEN[Sanken electric] Sanken Electric Co.,Ltd.
|
AOK29S50 |
500V 29A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
APT8024JFLL |
POWER MOS 7 800V 29A 0.240 Ohm
|
Advanced Power Technology
|
APT1004R2KN APT1004RKN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
CDEP115MENP-1R3M |
Ceramic Conformally Coated/Radial High Voltage Gold Max"; Capacitance: 1pF; Voltage: 1000V; Tolerance: ±5%; TC: C0G; Body Size: .250" (6.35) x .220" (5.59) x .200" (5.08); Lead Style: .170" (4.32) POWER INDUCTORS
|
SUMIDA CORPORATION.
|